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Detectors for high energy physics experiments

- High purity substrate (FZ)
- Double side processing
- Up to two metal levels per side
- Wafer through DRIE
- Selective n-p column doping
- Doped trenches for active edge
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- High purity substrate (FZ)
- Double side processing
- Microstrip: AC&DC coupling
- BIAS: resistors or punch-through
- Pixel: p-on-n, n-on-n and n-on-p
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