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Short bio

Giovanni Paternoster received the M.S. degree in physics from the University of Pisa, and the Ph.D. degree from University of Trento, Italy, with dissertation on the development and characterization of concentrator solar cells. He is currently a researcher at the Microtechnology Unit at the Fondazione Bruno Kessler, Trento. His research involves the microfabrication techniques of silicon solar cells, silicon photomultiplier and silicon detectors for visible and X-ray radiation.

Research interests
Silicon solar cells; Planar and 3D-Silicon Radiation Detectors; Silicon Photomultiplier
Publications

G. Paternoster et al. “Silicon Concentrator Solar Cells: Fabrication, Characterization and Modeling for Future Improvements”, Proceedings of the 27th European Photovoltaic Solar Energy Conference and Exhibition -­‐ Frankfurt, Germany (2012), pp. 181 – 184.

F. Sgrignuoli, G. Paternoster, A. Marconi, et al. “Modeling of silicon nanocrystals based down-­‐shifter for enhanced silicon solar cell performance”, Journal of Applied Physics, 111(3), February (2012).

G. Paternoster, P. Bellutti, L. Ferrario, F. Mattedi, E. Serra, "Optimization of the Emitter and the Metal-­‐Grid Design for Concentrating Silicon Photovoltaics", Proceedings of the 26th European Photovoltaic Solar Energy Conference -­‐ Hamburg, Germany (2011)

S. R. Amendolia, M. G. Bisogni, P. Delogu, M. E. Fantacci, G. Paternoster, V. Rosso, A. Stefanini, “Characterization of a mammographic system based on single photon counting pixel arrays coupled to GaAs x-­‐ray detectors”, Med. Phys. 36 (4), April (2009) pp. 1330 -­‐ 1339.

A. Annovazzi, G.Paternoster et al., “A GaAs pixel detectors-­‐based digital mammographic system: Performance and imaging test”, Nucl. Instr. and Meth. A576 (2007) pp. 154 – 159.